RA60H1317M Datasheet, Modules, Mitsubishi Electric

RA60H1317M Features

• Modules
• Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V)
• Pout>60W, ηT>40% @ VDD=12.5V, VGG=5V, Pin=50mW
• Broadband Frequency Range: 135-175MHz
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Part number:

RA60H1317M

Manufacturer:

Mitsubishi Electric

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234.39kb

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📄 Datasheet

Description:

Silicon rf power modules. The RA60H1317M is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 135- to 175-MHz range. The bat

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RA60H1317M

Mitsubishi Electric

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